Cover of: Nitrides and related wide band gap materials | Symposium L on Nitrides and Related Wide Band Gap Materials (1998 Strasbourg, France) Read Online
Share

Nitrides and related wide band gap materials proceedings of Symposium L on Nitrides and Related Wide Band Gap Materials of the E-MRS 1998 Spring Conference, Strasbourg, France 16-19 June 1998 by Symposium L on Nitrides and Related Wide Band Gap Materials (1998 Strasbourg, France)

  • 276 Want to read
  • ·
  • 6 Currently reading

Published by Elsevier in Amsterdam, New York .
Written in English

Subjects:

  • Nitrides -- Congresses.,
  • Semiconductors -- Materials -- Congresses.,
  • Optoelectronic devices -- Materials -- Congresses.

Book details:

Edition Notes

Statementedited by A. Hangleiter ... [et al.].
GenreCongresses.
SeriesEuropean Materials Research Society symposia proceedings ;, vol. 87, European Materials Research Society symposia proceedings ;, v. 87.
ContributionsHangleiter, A., European Materials Research Society. Meeting
Classifications
LC ClassificationsTK7871.15.N57 S954 1998
The Physical Object
Paginationxii, 418 p. :
Number of Pages418
ID Numbers
Open LibraryOL6803743M
ISBN 100080436153
LC Control Number00266058

Download Nitrides and related wide band gap materials

PDF EPUB FB2 MOBI RTF

  Get this from a library! Nitrides and related wide band gap materials: proceedings of Symposium L on Nitrides and Related Wide Band Gap Materials of the E-MRS Spring Conference, Strasbourg, France June [A Hangleiter; European Materials . NITRIDES AND RELATED WIDE BAND GAP MATERIALS PROCEEDINGS OF SYMPOSIUM L ON NITRIDES AND RELATED WIDE BAND GAP MATERIALS OF THE E-MRS SPRING CONFERENCE STRASBOURG, FRANCE JUNE Edited by A. HANGLEITER Optoelectronics Group, University of Stuttgart, Germany J.-Y. DUBOZ Central Research Laboratory, Thomson-CSF, . The variation of the band gap from eV for 3C-SiC to eV for 6H-SiC, and eV for 4H-SiC is caused by changes of the conduction band alone as reflected Author: Maria Katsikini. The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gap Eg = eV) after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (Eg = eV). This improved the signal-to-noise ratio for classical electronic applications.

The topics should be related, not only to the application of pure of III-nitrides or advanced wide-band gap materials to photovoltaics, but also their combination with other conventional semiconductors like Si or GaAs. Prof. Fernando B. Naranjo Dr. Susana Fernádez . This report reviews the market, technological and application trends, and suppliers of materials and devices worldwide. The worldwide market for devices based on gallium nitride (GaN) and related wide bandgap semiconductors was worth more than US$ million. This experienced a growth rate of % to reach US$ million in M. Fanciullia, T.D. Moustakasb, in Wide-Band-Gap Semiconductors, 4 Conclusions. Defects were studied in diamond, boron nitride and gallium nitride thin films. The negatively charged vacancy in diamond and the nitrogen vacancy in boron nitride are proposed as being responsible for the resonances observed in these materials. Product Type: Book Edition: 1 Volume: 89 First Published: Hardcover:

From inside the book. What people are saying - Write a review. We haven't found any reviews in the usual places. Contents. PHASE DIAGRAMS. Nitrides and Related Wide Band Gap Materials: Proceedings of Symposium L on Snippet view - All Book Search results » Bibliographic information. Title. Nitride has been drawing much attention owing to its wide range of applications in optoelectronics and there remains plenty of room for materials design and discovery. Here, a large set of nitrides has been designed, with their band gap and alignment being studied by first-principles calculations combined wi. The wide band gap material gallium nitride is prized for emitting blue light in LEDs. Like some oxides, nitrides can absorb hydrogen and have been discussed in the context of hydrogen storage, e.g. lithium nitride. Examples. Classification of such a varied group of compounds is somewhat arbitrary. Similar applications are found for InAlN with its direct gap covering the range from eV (InN) to eV (AlN), which makes the InAlN alloys good candidates for optical applications over a wide.